N-Channel MOSFET
2SK3152
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =100 mΩ typ.
• High speed ...
Description
2SK3152
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS =100 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1077-0200 (Previous: ADE-208-732)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK3140
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note3 EAR Note3 Pch Note2
Tch
Tstg
Ratings 120 ±20 10 40 10 10 8.5 25 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C °C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS 120
—
—
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS — — 10 µA VDS = 120 V, VGS = 0
Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance
VGS(off)
1.0
—
2.5
V ID = 1 mA, VDS = 10 V
RDS(on)
—
100 130 mΩ ID = 5 A, VGS = 10 VNote4
RDS(...
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