Silicon N-Channel MOSFET
2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =45 mΩ typ....
Description
2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS =45 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1075-0400 (Previous: ADE-208-750B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
4 G
D
12 3
123
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 Sep 07, 2005 page 1 of 8
2SK3150(L), 2SK3150(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note3 EAR Note3 Pch Note2
Tch
Tstg
Ratings 100 ±20 20 80 20 20 40 50 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C °C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS 100
—
—
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS — — 10 µA VDS = 100 V, VGS = 0
Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer adm...
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