P-Channel MOSFET
2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0897-0300 (Previous: ADE-20...
Description
2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0897-0300 (Previous: ADE-208-633A)
Rev.3.00 Sep 07, 2005
Features
Low on-resistance RDS (on) = 0.075 Ω typ.
Low drive current. 4 V gate drive devices. High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
D
1 2 3
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8
2SJ550(L), 2SJ550(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID (pulse) Note 1
IDR IAP Note 3 EAR Note 3 Pch Note 2
Tch
Tstg
Value –60 ±20 –15 –60 –15 –15 19 50 150 –55 to +150
(Ta = 25°C) Unit
V V A A A A mJ W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode rever...
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