KDS112E

SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C A G H KDS112E SILICON EPITAXIAL TYPE DIODE E B 2 13 FF 1. ANODE 1 2. ANODE 2 3. CATHODE D DIM MILLIMETERS A 1.60+_ 0.20 B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+_ 0.10 E 1.60+_ 0.10 F 0.39+_ 0.10 G 1.00+_ 0.10 JH 0.50 J 0.13+_ 0.05 3 21 ESM Marking BF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current IR Reverse Voltage VR Total Capacitance CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN. 30 - TYP. 0.8 0.6 MAX. 0.85 0.1 1.2 0.9 UNIT V A V pF 2014. 3. 31 Revision No : 2 1/2 SERIES RESISTANCE rs (Ω) KDS112E rs - IF 3 Ta=25 C f=100MHz 1 0.5 0.3 1 35 10 FORWARD CURRENT IF (mA) 20 TOTAL CAPACITANCE CT (pF) C T - VR 3 Ta=25 C f=1MHz 1 0.5 0.3 1 35 10 REVERSE VOLTAGE VR (V) 20 IF - VF -1 10 Ta=25 C -2 10 -3 10 -4 10 0 0.4 0.8 1.2 1.6 2.0 FORWARD VOLTAGE VF (V) 2.4 FORWARD CURRENT I F (A) 2014. 3. 31 Revision No : 2 2/2 ...