SILICON EPITAXIAL TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1....
Description
SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperature Range
Tstg
RATING 30 50 125
-55 125
UNIT V mA
C
A G H
KDS112E
SILICON EPITAXIAL TYPE DIODE
E B
2 13
FF 1. ANODE 1 2. ANODE 2 3. CATHODE
D DIM MILLIMETERS A 1.60+_ 0.20 B 0.85+_ 0.10 C 0.70+_ 0.10
D 0.27+_ 0.10
E 1.60+_ 0.10 F 0.39+_ 0.10 G 1.00+_ 0.10
JH
0.50
J 0.13+_ 0.05
3
21
ESM
Marking
BF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
Reverse Voltage
VR
Total Capacitance
CT
Series Resistance
rs
TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz
MIN. 30 -
TYP. 0.8 0.6
MAX. 0.85 0.1
1.2 0.9
UNIT V A V pF
2014. 3. 31
Revision No : 2
1/2
SERIES RESISTANCE rs (Ω)
KDS112E
rs - IF
3 Ta=25 C f=100MHz
1
0.5
0.3 1
35
10
FORWARD CURRENT IF (mA)
20
TOTAL CAPACITANCE CT (pF)
C T - VR
3 Ta=25 C f=1MHz
1
0.5 0.3
1
35
10
REVERSE VOLTAGE VR (V)
20
IF - VF
-1
10 Ta=25 C
-2
10
-3
10
-4
10 0
0.4 0.8 1.2 1.6 2.0 FORWARD VOLTAGE VF (V)
2.4
FORWARD CURRENT I F (A)
2014. 3. 31
Revision No : 2
2/2
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