KDP610UL

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Array type (4 Diode in one package) Low Capacitance Low Series resistance KDP610UL SILICON EPITAXIAL PIN TYPE DIODE TENTATIVE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Forward Voltage Total Capacitance Series Resistance IR VF CT rs ESD-Capability * - * Failure cirterion : IR>100nA at VR=30V. TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. - TYP. - MAX. 0.1 1.0 0.30 1.3 UNIT A V pF 100 - -V 2008. 1. 22 Revision No : 0 1/2 KDP610UL 2008. 1. 22 Revision No : 0 2/2 ...