Power MOSFET
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 5.2 36 1.2
123
V m nC
A
...
Description
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 5.2 36 1.2
123
V m nC
A
FastIRFET™ IRFH7185PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring
Features Low RDS(ON) (< 5.2m) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1
Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
Package Type
IRFH7185PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH7185TRPbF
Absolute Maximum Ratings
Parameter
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Max. ± 20
19 123 78 260 3.6 160 0.03 -55 to + 150
Units V
A
W
W/°C °C
Notes through are on page 9 1 www.irf.com © 2015 International Rectifier
...
Similar Datasheet