VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.60 10
30
Q2 25 2.10 23
30
V m nC A
Applica...
VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.60 10
30
Q2 25 2.10 23
30
V m nC A
Applications
Control and Synchronous MOSFETs for synchronous buck converters
FastIRFET™ IRFH4255DPbF
HEXFET® Power MOSFET
Features Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low RDSON synchronous MOSFET (<2.10m) Intrinsic
Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability
Base part number
IRFH4255DPbF
Package Type
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH4255DTRPbF
Absolute Maximum Ratings
VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C
IDM PD @TC = 25°C PD @TC = 70°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation
Linear Derating Factor Operating Junction and Storage Temperature Range
Q1 Max. Q2 Max.
± 20 64 105
51
84
30
120 31 20 0.25
30
420 38 24 0.30
-55 to + 150
Units V
A
W W/°C
°C
Thermal Resistance
Parameter RJC (Bottom) Junction-to-Case RJC (Top) Junction-to-Case RJA Juncti...