Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 2.4 3.3 16
70
V m nC A
...
Description
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 2.4 3.3 16
70
V m nC A
Applications
Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
FastIRFET™ IRFH4226PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features Low Charge (typical 16 nC) Low RDSon (<2.4 m) Low Thermal Resistance to PCB (<2.7 °C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFH4226PbF
Package Type PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH4226TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C
IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 30 110 69 70
460 3.4 46
0.027 -55 t...
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