Power MOSFET
IRFH3707PbF-1
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 12.4 5.4 12
V mΩ nC
A
Applications
l Sync...
Description
IRFH3707PbF-1
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 12.4 5.4 12
V mΩ nC
A
Applications
l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes
l System/load switch
Features Industry-standard pinout PQFN 3mm x 3mm Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
⇒
HEXFET® Power MOSFET
S DS DS
G D D
3mm x 3mm PQFN
Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number IRFH3707PbF-1
Package Type PQFN 3mm x 3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH3707TRPbF-1
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C
TJ TSTG
Parameter Drain-to-Source Voltage
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation gPower Dissipation gLinear Derating Factor
Operating Junction and Storage Temperature Range
Max. 30 ± 20 12 9.4 29 18 96 2.8 1.8
0.02 -55 to + 150
Units V
A
W W/°C
°C
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
ghRθJA Junction-to-Ambient
hRθJA Junction-to-Ambient (t<10s)
Notes through are on page 10
Typ. ––– ––– –––
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