GaN Power Amplifier
Applications
• Military Radar • Commercial Radar • Wideband Amplifiers
TGA2817-SM
S-Band 60 W GaN Power Amplifier
Prod...
Description
Applications
Military Radar Commercial Radar Wideband Amplifiers
TGA2817-SM
S-Band 60 W GaN Power Amplifier
Product Features
Frequency Range: 2.9 – 3.5 GHz Pout: > 48 dBm (at Pin = 24 dBm) Large Signal Gain: > 24 dB (at Pin = 24 dBm) PAE: > 54 % (at Pin = 24 dBm) Bias: VD = 28 V, IDQ = 200 mA, VG = −2.8 V (Typ) Package Dimensions: 7.00 x 7.00 x 0.85 mm
General Description
TriQuint’s TGA2817-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency.
The TGA2817-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The TGA2817-SM is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation board available on request.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12
36 35 34 33 32 31 RF Out 30 RF Out 29 28 27 26 25
13 14 15 16 17 18 19 20 21 22 23 24
Pad Configuration
Pad Number
Symbol
6, 7 RF Input
13, 48
VG1
15, 46
VD1
17, 44
VG2
23, 38
VD2
30, 31
RF Output
1-5, 8-12, 14, 16, 18-22, 24-29, 32-37, 39-43, 45, 47,...
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