DatasheetsPDF.com

HBT151

Silicon Controlled Rectifier

Description

Shantou Huashan Electronic Devices Co.,Ltd. HBT151 Silicon Controlled Rectifier Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Average On-State Current (IT(AV)=7.5A) * Non-isolated Type General Description Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional ...

SHANTOU HUASHAN

Download HBT151 Datasheet

Similar Datasheet

HBT136AE TRIAC - Hi-Sincerity Mocroelectronics
HBT137F-600 INSULATED TYPE TRIAC - SHANTOU HUASHAN
HBT138F-600 INSULATED TYPE TRIAC - SHANTOU HUASHAN
HBT139DE Three Quadrant Triac - Hi-Sincerity Mocroelectronics
HBT139F-600 INSULATED TYPE TRIAC - SHANTOU HUASHAN
HBT151 Silicon Controlled Rectifier - SHANTOU HUASHAN
HBT151-1000R 12A SCR SMD - HAOHAI
HBT151-500R 12A SCR SMD - HAOHAI
HBT151-600R 12A SCR SMD - HAOHAI
HBT151-650R 12A SCR SMD - HAOHAI

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)