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TGA2621-SM

TriQuint Semiconductor

GaAs Power Amplifier

Applications  Commercial and Military Radar  Satellite Communications TGA2621-SM 16 – 18.5 GHz 1 W GaAs Power Amplifi...


TriQuint Semiconductor

TGA2621-SM

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Description
Applications  Commercial and Military Radar  Satellite Communications TGA2621-SM 16 – 18.5 GHz 1 W GaAs Power Amplifier Product Features  Frequency Range: 16 – 18.5 GHz  PSAT: >30 dBm at Pin = 10 dBm  PAE: >23 % at Pin = 10 dBm  Small Signal Gain: >24.5 dB  Input Return Loss: > 10 dB  Bias: VD = 6 V, IDQ = 500 mA, VG = -0.6 V Typical  Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram General Description TriQuint’s TGA2621-SM is a packaged Ku-band Power Amplifier fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. The TGA2621-SM operates from 16 to 18.5 GHz and typically provides greater than 1W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain. The TGA2621-SM is available in a low cost, surface mount 32 lead 5x5 mm air-cavity ceramic QFN. It is ideally suited to support both radar and satellite communications as a driver or low power amplifier. Both RF ports have integrated DC blocking caps and are fully matched to 50 ohms allowing for simple system integration. Lead-free and RoHS compliant Evaluation Boards are available upon request. Pad Configuration Pad No. Symbol 1, 2, 4, 6, 8-9,16-17,19, 21, 23-25, 32-33 Gnd 3, 7, 10-15, 18, 22, 26, 28, 30 N/C 5 RFIN 20 RFOUT 27 VD2 29 VD1 31 VG Ordering Information Part ECCN Description TGA2621-SM EAR99 16 – 18.5 GHz 1 W GaAs PA Preliminary Datasheet: Rev - 11-07-14 © 2014 TriQuint - 1 of 13 - Disclaimer: Subject to change without notice ...




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