TGA2576-FS

Applications  Electronic Warfare  Radar  Test Instrumentation  EMC Amplifier TGA2576-FS 2.5 to 6GHz 40W GaN Power Amplifier Product Features  Frequency Range: 2.5 to 6 GHz  PSAT: 46.5 dBm @ PIN = 26 dBm  PAE: 35%  Small Signal Gain: 29 dB  Bias: Pulse VD = 30 V, IDQ = 1.55A, VG = −2.4 V Typ Pulse: PW = 150 us, DC = 5%  Dimensions: 12.7 x 12.7 x 3.89 mm Functional Block Diagram General Description TriQuint’s TGA2576-FS is a packaged wideband power amplifier designed on TriQuint’s production 0.25 um GaN on SiC process. Operating from 2.5 to 6 GHz, the TGA2576-FS achieves 40 W of saturated output power, greater than 35% power-added efficiency and 29 dB small signal gain. Both RF ports are fully matched to 50 Ω, the TGA2576FS is ideally suited to support both commercial and defense related opportunities. Pin Configuration Pin No. 1, 3, 5, 7, 8, 10, 12, 14 2, 6 4 9, 13 11 Symbol GND VG RFIN VD RFOUT Lead-free and RoHS compliant Evaluation Boards are available up on request. Ordering Information Part ECCN Description TGA2576-FS 3A001.b.2.a 2.5 to 6 GHz 40W GaN PA Preliminary Datasheet: Rev B 1-08-15 © 2015 TriQuint - 1 of 15 - Disclaimer: Subject to change without notice www.triquint.com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS, Pulse) RF Input Power, CW, 50 Ω, T = 25°C 40 V −5 to 0 V 5000 mA −18 to 35 mA 120 W 28 dBm Channel tremperature (TCH) 275°C ...