TGA2575-TS

TGA2575-TS Ka-Band 3 Watt Power Amplifier Applications  Military Radar  Communications Product Features  Frequency Range: 32.0 – 38.0 GHz  Power: 35.5 dBm Psat  PAE: 22%  Gain: 19 dB  Return Loss: 12 dB  Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical  Dimensions: 5.31 x 8.92 x 0.49 mm Functional Block Diagram C5 100 pF 6 TGA2575-TS C3 1000 pF 5 C1 1000 pF 14 C6 100 pF C4 1000 pF 2 C2 1000 pF 3 General Description Bond Pad Configuration TriQuint’s TGA2575-TS is a wideband power amplifier fabricated on TriQuint’s production-released 0.15um pwr-pHEMT process. Operating from 32 GHz to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band. The TGA2575-TS is a 2 mil thick GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling. Pin # 1 2, 6 3, 5 4 Symbol RF In Vg Vd RF Out Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities. The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant Data Sheet: Rev - 12/14/12 © 2012 TriQuint Semiconductor, Inc. Ordering Information Part No. ECCN Description TGA2575-TS 3A001.b.2.d Ka-band Power Amplifier - 1 of 12 - Disclaimer: Subject to change with...