RJF0619JPD

Target Specifications Datasheet RJF0619JPD 60V, 30A Silicon N Channel Thermal FET Power Switching R07DS1108EJ0100 Rev.1.00 Sep. 02, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V and 24 V. AEC-Q101 Compliant Endurance capability against to ESD. Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Gate to source voltage Drain current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS VGSS ID Note3 IDR IAP Note 2 EAR Note 2 Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25°C 2. Tch = 25°C, Rg ≥ 50 Ω 3. It provides by the current...