RJF0612JPE

Target Specifications Datasheet RJF0612JPE 60V - 50A - N Channel Thermal FET Power Switching R07DS0887EJ0200 Rev.2.00 Jan 29, 2014 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V and 24 V. AEC-Q101 Compliant Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 G Gate Resistor Current Limitation Circuit Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage Drain current VGSS ID Note3 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25°C 2. Tch = 25°C, Rg ≥ 50 Ω 3. It provides by the current limitation lower bound value. Rati...