RJF0608JSP

Target Specifications Datasheet RJF0608JSP 60 V - 5 A - N Channel MOS FET Power Switching R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Logic level operation (4 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.  High density mounting  Power supply voltage applies 12 V and 24 V.  AEC-Q101 Compliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 8765 1234 G Gate resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit Current Limitation Circuit DDDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 60 Gate to source voltage Gate to source voltage Drain current VGSS VGSS ID Note3 16 –2.5 5 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note 1 5 2.6 28.9 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. When using the glass e...