Silicon N-Channel FET
Target Specifications Datasheet
RJF0408JPD
40V, 30A Silicon N Channel Thermal FET Power Switching
R07DS1133EJ0100 Rev....
Description
Target Specifications Datasheet
RJF0408JPD
40V, 30A Silicon N Channel Thermal FET Power Switching
R07DS1133EJ0100 Rev.1.00
Dec 12, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V. AEC-Q101 Compliant. Endurance capability against to ESD.
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4
1 2 3
G
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
Current Limitation Circuit
Gate Shut-down Circuit
D
1. Gate 2. Drain 3. Source 4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage Drain current
VGSS ID Note3
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
IDR IAP Note 2 EAR Note 2 Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current lim...
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