RJF0610DSP

Target Specifications Datasheet RJF0610DSP 60V , 1.5A Silicon N channel Thermal FET Power Switching R07DS0560EJ0301 Rev.3.01 Sep 06, 2016 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Logic level operation (5 to 6 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Temperature hysteresis type.  High density mounting  Power supply voltage applies 12 V and 24 V. Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 8765 1234 2 G 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Gate Resistor Current Limitation Circuit Temperature Self Gate Sensing Return Shut-down Circuit Circuit Circuit MOS1 DD 78 4 G 1 S Gate Resistor Current Limitation Circuit Temperature Self Gate Sensing Return Shut-down Circuit Circuit Circuit MOS2 DD 56 3 S Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 60 Gate to source voltage VGSS 16 Gate to source voltage Drain current VGSS ID Note4 –2.5 1.5 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 3 EAR Note 3 Pch Note 1 1.5 0.95 77.4 2 Channel dissipat...