high performance SiGe HBT MMIC amplifier
SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier
SGL0163Z
100MHz to 1300MHz SILICON GERMANI...
Description
SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier
SGL0163Z
100MHz to 1300MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
Product Description
The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0163Z has been characterized at VD=3V for low power and 4V for medium power applications. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT
Temperature Compensation
Circuit
RF In
VS RF Out / VS
Features
Internally Matched to 50 800MHz to 1300MHz
High Input/Output Intercept Low Noise Figure: 1.2dB Typ.
at 900MHz Low Power Consumption Single Voltage Supply Opera-
tion Internal Temperature Com-
pensation
Applications
Receivers, GPS, RFID Cellular, Fixed Wireless, Land
Mobile
Parameter
Specification (VS=3V) Min. Typ. Max.
Specification (VS=4V) Min. Typ. Max.
Small Signal Gain
15.7
16.6
14.0
15.5
17.0
15.8
14.1
15.0
Output Power at 1dB Compression
4.4
9.9
3.2 5.2
10.1
5.6 10.5
Input Third Order Intercept Point
5.3 12.1
5.0 7.0
13.4
9.0 14.8
Noise Figure
1.1 1.6
1.2 1.7
1.7
1.2...
Similar Datasheet