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SZA-6044

RF Micro Devices

POWER AMPLIFIER

SZA-6044 5.1 GHz to 5.9 GHz ¼Watt Power Amplifier with Active Bias SZA-6044 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ...


RF Micro Devices

SZA-6044

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Description
SZA-6044 5.1 GHz to 5.9 GHz ¼Watt Power Amplifier with Active Bias SZA-6044 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed as a driver or final stage amplifier for equipment in the 5.1GHzto5.9GHz band. It can run from a 3Vto5V supply. Load line optimization for target band is possible outside the package. Its high linearity makes it an ideal choice for multicarrier and digital applications. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features  Single 3V to 5V Operation  High Linearity Class A OIP3=39dBm at 5V  802.11a 54Mb/s POUT=17dBm at 3% EVM  P1dB 24dBm at 5V, 21dBm at 3.3 V  Surface Mount Plastic Pack- age  Power Up/Down Control <1s Applications  OFDM  Multicarrier Applications  802.11a WiFi Driver Stage  Fixed Wireless, UNII Parameter Frequency of Operation, Output Power at 1dB Compression Small Signal Gain Worst Case Input Return Loss Worst Case Output Return Loss Output IP3 POUT Min. 5100 22.5 17.0 14.9 8.0 12.0 37.0 Specification Typ. 24.9 24.6...




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