SZM-2066Z

SZM-2066Z 2.4GHz to 2.7GHz 2W Power Ampli- SZM-2066Zfier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V supply. The external output match and bias adjustability allows load line optimiza- tion for other applications or over narrower bands. It features an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. GaAs MESFET  InGaP HBT Vcc = 5V SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS RFIN RFOUT Si BJT GaN HEMT Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias InP HBT RF MEMS LDMOS Pow er Up/Dow n Control Pow er Detector Features  P1dB= 33.5dBm at 5V  Three Stages of Gain:37dB  802.11g 54Mb/s Class AB Per- formance  POUT=26dBm at 2.5% EVM, VCC 5V, 690mA  Active Bias with Adjustable Cur- rent  On-Chip Output Power Detector  Low Thermal Resistance  Power Up/Down Co...