SZM-3166Z 3.3GHz to 3.6GHz 2W Power Ampli-
SZM-3166Zfier
3.3GHz to 3.6GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Prod...
SZM-3166Z 3.3GHz to 3.6GHz 2W Power Ampli-
SZM-3166Zfier
3.3GHz to 3.6GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for
802.16 customer premises equipment (CPE) terminals in the 3.3GHz to 3.6GHz bands. It can run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line optimization for other applications covering 3.5GHz to 3.8GHz. It features an output power
detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.
Optimum Technology Matching® Applied
Vcc = 5V
GaAs HBT GaAs MESFET
InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
RFIN
Vbias = 5V
Stage 1 Bias
Power Up/Down Control
Stage 2 Bias
Stage 3 Bias
Power Detector
RFOUT
Features
P1dB=35dBm at 5.2V Three Stages of Gain:35dB 802.11g 54Mb/s Class AB Perfor-
mance POUT=27dBm at 2.5% EVM, VCC
5.2V, 900mA Active Bias with Adjustable Current ...