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1N821A Dataheets PDF



Part Number 1N821A
Manufacturers NXP
Logo NXP
Description Voltage reference diodes
Datasheet 1N821A Datasheet1N821A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D050 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 20 Philips Semiconductors Product specification Voltage reference diodes FEATURES • Temperature compensated • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) • Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage 1N821 to 1N829 1N821A to 1N829A DESCRIPTION Voltage reference diode in a herme.

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DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D050 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 20 Philips Semiconductors Product specification Voltage reference diodes FEATURES • Temperature compensated • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) • Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage 1N821 to 1N829 1N821A to 1N829A DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION • Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − −55 MAX. 50 400 +200 200 +100 UNIT mA mW °C °C °C 1996 Mar 20 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion 1N821; 1N821A 1N823; 1N823A 1N825; 1N825A 1N827; 1N827A 1N829; 1N829A SZ temperature coefficient 1N821; 1N821A 1N823; 1N823A 1N825; 1N825A 1N827; 1N827A 1N829; 1N829A rdif differential resistance 1N821 to 1N829 1N821A to 1N829A Notes IZ = 7.5 mA; see Fig.4 − − IZ = 7.5 mA: see Fig.3; notes 1 and 2 CONDITIONS IZ =7.5 mA IZ =7.5 mA; test points for Tamb: −55; +25; +75; +100 °C; see Fig.2; notes 1 and 2 MIN. 5.89 − − − − − − − − − − 1N821 to 1N829 1N821A to 1N829A TYP. 6.20 − − − − − − − − − − − − MAX. 6.51 96 48 19 9 5 0.01 0.005 0.002 0.001 V UNIT mV mV mV mV mV %/K %/K %/K %/K 0.0005 %/K 15 10 Ω Ω 1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change, namely the differential resistance rdif and the temperature coefficient SZ. a) As the max. rdif of the device can be 15 Ω, a change of 0.01 mA in the current through the reference diode will result in a ∆Vref of 0.01 mA × 15 Ω = 0.15 mV. This level of ∆Vref is not significant on a 1N821 (∆Vref < 96 mV), it is however very significant on a 1N829 (∆Vref < 5 mV). b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the specified test current and the SZ of the reference diode will be different at different levels of IZ. The absolute value of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies particularly to the 1N829. The effect of the stability of IZ on SZ is shown in Fig.3. 2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆Vref) over the specified temperature range, at the specified test current (IZ), verified by tests at indicated temperature points within the range. VZ is measured and recorded at each temperature specified. The ∆Vref between the highest and lowest values must not exceed the maximum ∆Vref given. Therefore the temperature coefficient is only given as V ref1 – V ref2 100 a reference. It may be derived from: S Z = ------------------------------------- × ------------------- %/K T amb2 – T amb1 V ref nom THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS 8 mm from the body lead length 10 mm VALUE 300 375 UNIT K/W K/W 1996 Mar 20 3 Philips Semiconductors Product specification Voltage reference diodes GRAPHICAL DATA MBG534 1N821 to 1N829 1N821A to 1N829A handbook, halfpage 10 (2) (3) (1) handbook, halfpage IZ (mA) 7.5 0.002 ∆SZ (%/K) 0.001 MBG536 0 −0.001 5 (1) (2) (3) −0.002 2.5 -75 -50 -25 0 ∆Vref(max) (mV) 25 50 −0.003 4 5 6 7 8 9 10 IZ (mA) 11 Referenced to IZ = 7.5 mA. (1) Tj = 100 °C. (2) Tj = 25 °C. (3) Tj = −55 °C. Fig.2 Working current as a function of the maximum reference voltage excursion. Fig.3 Temperature coefficient change as a function of working current; typical values. 103 handbook, halfpage rdif (Ω) 102 MBG535 10 (1) (2) (3) 1 1 10 IZ (mA) 102 (1) Tj = 100 °C. (2) Tj = 25 °C. (3) Tj = −55 °C. Fig.4 Differential resistance as a function of working current; typical values. 1996 Mar 20 4 Philips Semiconductors Product specification Voltage reference diodes PACKAGE OUTLINE 1N821 to 1N829 1N821A to 1N829A handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The marking band indicates the cathode. The diodes are type branded. Fig.5 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more.


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