Elektronische Bauelemente
SMS6001
440mA, 60V, RDS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A S...
Elektronische Bauelemente
SMS6001
440mA, 60V, RDS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS6001 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage ESD Rating: 2KV HBM
APPLICATION
DC-DC converter circuit Load Switch
DEVICE MARKING:
W61*
* = Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7’ inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20
0.6 REF. 0.95 BSC.
Pin Configuration (Top View)
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 1.4
TA= 25°C TA= 70°C
Power Dissipation 1.4
TA= 25°C TA= 70°C
Continuous Drain Current 2.4
TA= 25°C TA= 70°C
Power Dissipation 2.4 Pulsed Drain Current 3
TA= 25°C TA= 70°C
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
VDS VGS ID
PD
ID
PD IDM RθJL TJ, TSTG
10S
0.5 0.4 0.69 0.44 0.47 0.38 0.6 0.39
Rating Steady State
60 ±20
0.4...