BCW68GL

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −45 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −800 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board PD (Note 1) TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 300 mW 2.4 mW/°C 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 2 EMITTER 3 1 2 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM DG MG G DG = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon man...