N-Channel MOSFET
FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
March 2013
FDP7N60NZ / FDPF7N60NZ
N-Channel UniFETTM II MOSFET
60...
Description
FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
March 2013
FDP7N60NZ / FDPF7N60NZ
N-Channel UniFETTM II MOSFET
600 V, 6.5 A, 1.25
Features
RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 3.25 A Low Gate Charge (Typ. 13 nC) Low Crss (Typ. 7 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Improved Capability RoHS Compliant
Applications
LCD/LED TV Lighting Uninterruptible Power Supply AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
G D S
TO-220
G D S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG...
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