Document
Ordering number : EN1784C
2SD1618
Bipolar Transistor
15V, 0.7A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Features
• Low collector-to-emitter saturation voltage
• Very small size making it easy to provide highdensity, small-sized hybrid IC’s
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
VCBO VCEO VEBO IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Conditions When mounted on ceramic substrate (250mm2×0.8mm)
Ratings 20 15 5 0.7 1.5
500 1.3 150 --55 to +150
Unit V V V A A
mW W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7007B-004
Top View 4.5 1.6
2SD1618S-TD-E 2SD1618T-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1.0 2.5
4.0
DA
LOT No.
1 0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base 2 : Collector 3 : Emitter
PCP
Semiconductor Components Industries, LLC, 2013 September, 2013
TD
Electrical Connection
2 1
3
RANK
80812 TKIM/92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784-1/6
2SD1618
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance
ICBO IEBO hFE1 hFE2 fT VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob
VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=10V, IC=50mA IC=5mA, IB=0.5mA IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A VCB=10V, f=1MHz
* : The 2SD1618 is classified by 50mA hFE as follows :
Rank hFE
S 140 to 280
T 200 to 400
U 280 to 560
Ordering Information
Device 2SD1618S-TD-E 2SD1618T-TD-E
Package PCP PCP
Shipping 1,000pcs./reel 1,000pcs./reel
Ratings min typ
140* 60
20 15
5
250 10 30 0.8
8
max 0.1 0.1
560*
25 80 1.2
Unit
μA μA
MHz mV mV V V V V pF
memo Pb Free
No.1784-2/6
2SD1618
Collector Current, IC -- mA 50mA 10mA
800 700 600 500 400
300 200 100
0 0
1000 7 5 3 2
IC -- VCE
6mA 4mA
2mA
1mA
IB=0
0.1 0.2 0.3 0.4 0.5
Collector-to-Emitter Voltage, VCE -- V ITR08841
fT -- IC
VCE=10V
Base Current, IB -- μA
100
80
60
40
20
0 0
1000 7 5 3 2
IB -- VBE
VCE=5V
0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE -- V ITR08842
hFE -- IC
VCE=2V
DC Current Gain, hFE
Gain-Bandwidth Product, fT -- MHz
Output Capacitance, Cob -- pF
100 7 5 3 2
10 1.0
5
3
2.