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2SD1618 Dataheets PDF



Part Number 2SD1618
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet 2SD1618 Datasheet2SD1618 Datasheet (PDF)

Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junc.

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Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 15 5 0.7 1.5 500 1.3 150 --55 to +150 Unit V V V A A mW W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SD1618S-TD-E 2SD1618T-TD-E 1.5 Product & Package Information • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking 1.0 2.5 4.0 DA LOT No. 1 0.4 2 0.5 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter PCP Semiconductor Components Industries, LLC, 2013 September, 2013 TD Electrical Connection 2 1 3 RANK 80812 TKIM/92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784-1/6 2SD1618 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance ICBO IEBO hFE1 hFE2 fT VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=10V, IC=50mA IC=5mA, IB=0.5mA IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A VCB=10V, f=1MHz * : The 2SD1618 is classified by 50mA hFE as follows : Rank hFE S 140 to 280 T 200 to 400 U 280 to 560 Ordering Information Device 2SD1618S-TD-E 2SD1618T-TD-E Package PCP PCP Shipping 1,000pcs./reel 1,000pcs./reel Ratings min typ 140* 60 20 15 5 250 10 30 0.8 8 max 0.1 0.1 560* 25 80 1.2 Unit μA μA MHz mV mV V V V V pF memo Pb Free No.1784-2/6 2SD1618 Collector Current, IC -- mA 50mA 10mA 800 700 600 500 400 300 200 100 0 0 1000 7 5 3 2 IC -- VCE 6mA 4mA 2mA 1mA IB=0 0.1 0.2 0.3 0.4 0.5 Collector-to-Emitter Voltage, VCE -- V ITR08841 fT -- IC VCE=10V Base Current, IB -- μA 100 80 60 40 20 0 0 1000 7 5 3 2 IB -- VBE VCE=5V 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V ITR08842 hFE -- IC VCE=2V DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 100 7 5 3 2 10 1.0 5 3 2.


2SC6098 2SD1618 2SD1685


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