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NE5531079A

Renesas
Part Number NE5531079A
Manufacturer Renesas
Description 7.5V OPERATION SILICON RF POWER LDMOS FET
Published Apr 1, 2016
Detailed Description DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AM...
Datasheet PDF File NE5531079A PDF File

NE5531079A
NE5531079A

Overview
DATA SHEET SILICON POWER MOS FET NE5531079A 7.
5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.
5 V radio systems.
Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.
This device can deliver 40.
0 dBm output power with 68% power added efficiency at 460 MHz under the 7.
5 V supply voltage.
FEATURES • High output power : Pout = 40.
0 dBm TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 68% TYP.
(VDS = 7.
5 V, IDset = 200 mA, f ...


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