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SDU04N65 Dataheets PDF



Part Number SDU04N65
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDU04N65 DatasheetSDU04N65 Datasheet (PDF)

Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 650V 4A 2.5 @VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU04N65HZ TO-252 SDD04N65HS TO-251S SDD04N65HL TO-251L .

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Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 650V 4A 2.5 @VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU04N65HZ TO-252 SDD04N65HS TO-251S SDD04N65HL TO-251L Marking Code SDU04N65 SDD04N65 SDD04N65 Delivery Mode Reel Tube Tube RoHS Status Halogen Free Halogen Free Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a e TC=25°C TC=100°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=100°C TJ, TSTG Operating Junction and Storage Temperature Range Limit 650 ±30 4 2.8 11 100 83 42 -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 °C/W 50 °C/W Details are subject to change without notice. 1 Jan,02,2014 www.samhop.com.tw SDU/D04N65 Ver 2.3 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=520V , VGS=0V VGS= ±30V , VDS=0V 650 V 1 uA ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=2A VDS=20V , ID=2A 2 3 4V 2.5 3.2 ohm 3.3 S DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz 490 pF 54 pF 12 pF SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=325V ID=1A VGS=10V RGEN=6 ohm VDS=325V,ID=1A,VGS=10V VDS=325V,ID=1A, VGS=10V 23 ns 17 ns 29 ns 12 ns 8.2 nC 1.7 nC 3.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature. 0.81 1.4 V Jan,02,2014 2 www.samhop.com.tw SDU/D04N65 ID, Drain Current(A) RDS(on)( Ω ) 5 VGS=10V VGS=7V 4 VGS=6V 3 2 1 VGS=5V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 6 5 4 3 VGS=10V 2 1 0 0.1 1 2 3 4 5 ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 VDS=VGS 1.4 ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Vth, Normalized Gate-Source Threshold Voltage 3 BVDSS, Normalized Drain-Source Breakdown Voltage RDS(ON), On-Resistance Normalized ID, Drain Current(A) Ver 2.3 3.0 2.4 Tj=125 C 1.8 -55 C 1.2 25 C 0.6 0 0 1.2 2.4 3.6 4.8 6.0 7.2 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3.0 2.6 2.2 VGS=10V ID=2A 1.8 1.4 1.0 0 0 25 50 75 100 125 150 Tj( C) Tj, Junction Temperature ( C) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Jan,02,2014 www.samhop.com.tw SDU/D04N65 RDS(on)( Ω ) C, Capacitance (pF) 9.0 ID=2A 7.5 6.0 125 C 4.5 3.0 75 C 25 C 1.5 0 0 2 4 6 8 10 VGS, Gate-Sorce Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 1000 800 600 Ciss 400 Coss 200 Crss 0 0 10 20 30 40 50 VDS, Drain-to Source Voltage(V) Figure 9. Capacitance 300 100 10 TD(off) TD(on) Tr Tf VDS=325V, ID=1A VGS=10V 1 1 10 100 Rg, Gate Resistance(Ω ) Figure 11. switching characteristics Switching Time(ns) Is, Source-drain current (A) 20.0 125 C 10.0 5.0 75 C 25 C Ver 2.3 1.0 0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VDS=325V 8 ID=1A 6 4 2 0 0 3 6 9 12 Qg, Total Gate Charge(nC) Figure 10. Gate Charge VGS, Gate to Source Voltage (V) 10 ID, Drain Current (A) RDS(ON) Limit 100us 1m1s0mDsC 1 0.1 0.01 0.1 VGS=10V Single Pulse TA=25 C 1 10 100 1000 VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Jan,02,2014 4 www.samhop.com.tw SDU/D04N65 Ver 2.3 VDS L RG 20V tp D.U.T IAS 0.01 + - VDD Uncamped Inductive Test Circuit Figure 13a. V(BR)DSS tp IAS Unclamped Inductive Waveforms Figure 13b. 2 1 D=0.5 0.2 0.1 0.1 0.0.


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