Document
Green SDU/D04N65
Product
SamHop Microelectronics corp.
Ver 2.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
650V
4A
2.5 @VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU04N65HZ
TO-252
SDD04N65HS
TO-251S
SDD04N65HL
TO-251L
Marking Code SDU04N65 SDD04N65 SDD04N65
Delivery Mode Reel
Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=100°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 650 ±30
4 2.8 11 100 83 42
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8 °C/W 50 °C/W
Details are subject to change without notice.
1
Jan,02,2014
www.samhop.com.tw
SDU/D04N65
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=520V , VGS=0V VGS= ±30V , VDS=0V
650 V 1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=2A VDS=20V , ID=2A
2 3 4V 2.5 3.2 ohm 3.3 S
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
490 pF 54 pF 12 pF
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=325V ID=1A VGS=10V RGEN=6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A, VGS=10V
23 ns 17 ns 29 ns 12 ns 8.2 nC 1.7 nC 3.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature.
0.81 1.4
V
Jan,02,2014
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SDU/D04N65
ID, Drain Current(A)
RDS(on)( Ω )
5
VGS=10V
VGS=7V
4 VGS=6V
3
2
1 VGS=5V
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3 VGS=10V
2
1
0 0.1 1 2 3 4 5
ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6 VDS=VGS
1.4 ID=250uA 1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Vth, Normalized Gate-Source Threshold Voltage
3
BVDSS, Normalized Drain-Source Breakdown Voltage
RDS(ON), On-Resistance Normalized
ID, Drain Current(A)
Ver 2.3
3.0
2.4
Tj=125 C
1.8
-55 C
1.2
25 C
0.6
0 0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2
VGS=10V ID=2A
1.8
1.4
1.0
0 0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with Drain Current and Temperature
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation with Temperature
Jan,02,2014
www.samhop.com.tw
SDU/D04N65
RDS(on)( Ω )
C, Capacitance (pF)
9.0
ID=2A
7.5
6.0
125 C
4.5
3.0 75 C 25 C
1.5
0 0 2 4 6 8 10
VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
1200
1000
800
600 Ciss
400
Coss
200
Crss
0 0 10 20 30 40 50
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
300 100
10
TD(off)
TD(on)
Tr
Tf
VDS=325V, ID=1A VGS=10V
1 1 10
100
Rg, Gate Resistance(Ω ) Figure 11. switching characteristics
Switching Time(ns)
Is, Source-drain current (A)
20.0
125 C
10.0
5.0
75 C 25 C
Ver 2.3
1.0 0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VDS=325V 8 ID=1A
6
4
2
0 0 3 6 9 12
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
VGS, Gate to Source Voltage (V)
10
ID, Drain Current (A)
RDS(ON) Limit
100us 1m1s0mDsC
1
0.1
0.01 0.1
VGS=10V Single Pulse
TA=25 C
1
10
100 1000
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe Operating Area
Jan,02,2014
4 www.samhop.com.tw
SDU/D04N65
Ver 2.3
VDS
L
RG
20V
tp
D.U.T IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit Figure 13a.
V(BR)DSS tp
IAS
Unclamped Inductive Waveforms Figure 13b.
2
1 D=0.5
0.2
0.1 0.1 0.0.