AO3418L

Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package. G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 3.8 3.1 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 D S Units V V A W °C Units °C/W °C/W °C/W 2014-5-29 1 www.kersemi.com Electrical Characteristics (TJ=25°C unless otherwise noted) KSM3418,KSM3418L Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=24V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VD...