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SDD02N60

SamHop Microelectronics

N-Channel MOSFET

SDU/D02N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect T...


SamHop Microelectronics

SDD02N60

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Description
SDU/D02N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 600V 2A 4.7 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU02N60HZ TO-252 SDD02N60HS TO-251S SDD02N60HL TO-251L Marking Code SDU02N60 SDD02N60 SDD02N60 Delivery Mode Reel Tube Tube RoHS Status Halogen Free Halogen Free Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a d TC=25°C TC=100°C IDM -Pulsed b PD Maximum Power Dissipation TC=25°C TC=100°C Limit 600 ±30 2 1.3 5.8 42 17 Units V V A A A W W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 3 °C/W 50 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDU/D02N60 Ver 2.2 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V ,...




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