Green SDU/D01N70
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect ...
Green SDU/D01N70
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max
700V 1A 16 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU01N70HZ
TO-252
SDD01N70HS
TO-251S
SDD01N70HL
TO-251L
Marking Code SDU01N70 SDD01N70 SDD01N70
Delivery Mode Reel
Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Drain Current-Continuous IDM -Pulsed a
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 700 ±30
1 0.8 3 4.9 42 27
-55 to 150
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W 50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDU/D01N70
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA ...
