SDF08N60

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 8A 0.89 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP08N60HZ TO-220 SDP08N60PZ TO-220 SDF08N60HZ TO-220F SDF08N60PZ TO-220F Marking Code SDP08N60 08N60 SDF08N60 08N60 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP08N60 SDF08N60 VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 88 5.7 5.7 IDM -Pulsed a 23 23 EAS Single Pulse Avalanche Energy c 400 PD Maximum Power Dissipation TC=25°C TC=100°C 150 50 75 25 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 3 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP08N60 SDF08N60 Ver 2.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body...