SDP07N80

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP07N80 SDF07N80 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 800V 7A 1.4 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP07N80HZ TO-220 Marking Code SDP07N80 Delivery Mode Tube RoHS Status Halogen Free SDP07N80PZ SDF07N80HZ SDF07N80PZ TO-220 TO-220F TO-220F 07N80 SDF07N80 07N80 Tube Tube Tube Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP07N80 SDF07N80 VDS Drain-Source Voltage VGS Gate-Source Voltage 800 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 77 4.2 4.2 IDM -Pulsed a 28 28 EAS Single Pulse Avalanche Energy c 650 PD Maximum Power Dissipation TC=25°C TC=100°C 167 56 67 22 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 0.75 62.5 2.25 62.5 °C/W °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP07N80 SDF07N80 Ver 1.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain C...