SDP03N80

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP03N80 SDF03N80 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 800V 3.0A 3.3 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package Marking Code Delivery Mode RoHS Status SDP03N80HZ TO-220 SDP03N80 Tube Halogen Free SDP03N80PZ TO-220 03N80 Tube Pb Free SDF03N80HZ TO-220F SDF03N80 Tube Halogen Free SDF03N80PZ TO-220F 03N80 Tube Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP03N80 SDF03N80 VDS Drain-Source Voltage 800 VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C ±30 ±30 3 3e 2.5 2.5 e IDM -Pulsed b 8.9 8.9e EAS Single Pulse Avalanche Energy d 100 PD a Maximum Power Dissipation TC=25°C TC=70°C 84 42 58 29 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a 1.8 3.6 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP03N80 SDF03N80 Ver 1.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage D...