C2M0025120D

VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Battery Chargers Motor Drive Pulsed Power Applications Part Number C2M0025120D Package TO-247-3 Marking C2M0025120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current ID(pulse) Pulsed Drain Current PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature 1200 -10/+25 -5/+20 63 39 250 378 -55 to +150 V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values VGS =20 V, TC = 25˚C A VGS =20 V, TC = 100˚C A Pulse width tP limited by Tjmax W TC=25˚C, TJ = 150 ˚C ˚C TL Solder Temperature Md Mounting Torque 260 ˚C 1.6mm (0.063”) from case for 10s 1 8.8 Nm lbf-in M3 or 6-32 screw Note (1): Die limits are 90A (25°C) and 60A (100°C) Note Fig. 19 Not...