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C2M0040120D Dataheets PDF



Part Number C2M0040120D
Manufacturers Cree
Logo Cree
Description Silicon Carbide Power MOSFET
Datasheet C2M0040120D DatasheetC2M0040120D Datasheet (PDF)

VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency TO-247-3 App.

  C2M0040120D   C2M0040120D



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VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency TO-247-3 Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drives • Pulsed Power Applications Part Number C2M0040120D Package TO-247-3 Marking C2M0040120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current ID(pulse) Pulsed Drain Current 1200 -10/+25 -5/+20 55 36 160 V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values VGS = 20 V, TC = 25˚C A VGS = 20 V, TC = 100˚C A Pulse width tP limited by Tjmax PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque 278 -55 to +150 260 1 8.8 W TC=25˚C, TJ = 150 ˚C ˚C ˚C 1.6mm (0.063”) from case for 10s Nm lbf-in M3 or 6-32 screw Note Fig. 19 Fig. 22 Fig. 20 1 C2M0040120D Rev. 3, 04-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. V(BR)DSS VGS(th) Drain-Source Breakdown Voltage Gate Threshold Voltage 1200 2.0 3.2 2.4 IDSS Zero Gate Voltage Drain Current 1 IGSS Gate-Source Leakage Current 44 RDS(on) Drain-Source On-State Resistance 82 gfs Transconductance 18.2 17.2 Ciss Input Capacitance 2440 Coss Output Capacitance 171 Crss Reverse Transfer Capacitance 11 Eoss Coss Stored Energy 89 EON Turn-On Switching Energy (Body Diode) 1.7 EOFF Turn Off Switching Energy (Body Diode) 0.4 EON Turn-On Switching Energy (External SiC Diode) 1.3 EOFF Turn Off Switching Energy (External SiC Diode) 0.4 td(on) Turn-On Delay Time 13 tr Rise Time 61 td(off) Turn-Off Delay Time 25 tf Fall Time 13 RG(int) Internal Gate Resistance 1.8 Qgs Gate to Source Charge 34 Qgd Gate to Drain Charge 42 Qg Total Gate Charge 120 Max. 4 100 250 52 Unit V V V μA nA mΩ S Test Conditions VGS = 0 V, ID = 100 μA VDS = VGS , ID = 10mA VDS = VGS , ID = 10mA,TJ = 150 °C VDS = 1200 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 40 A VGS = 20 V, ID = 40 A, TJ = 150 °C VDS= 20 V, IDS= 40 A VDS= 20 V, IDS= 40 A, TJ = 150 °C VGS = 0 V pF VDS = 1000 V f = 1 MHz μJ VAC = 25 mV mJ VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH VDD = 800 V, VGS = -5/20 V ID = 40 A ns RG(ext) = 2.5 Ω, RL = 20 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Ω f .


ACE4101 C2M0040120D C2M0025120D


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