Document
VDS
1200 V
C2M0040120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C RDS(on)
55 A 40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant
Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency
TO-247-3
Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drives • Pulsed Power Applications
Part Number C2M0040120D
Package TO-247-3
Marking C2M0040120
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VDSmax VGSmax VGSop
Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse) Pulsed Drain Current
1200 -10/+25 -5/+20
55 36
160
V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values
VGS = 20 V, TC = 25˚C A
VGS = 20 V, TC = 100˚C
A Pulse width tP limited by Tjmax
PD
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL
Solder Temperature
Md
Mounting Torque
278
-55 to +150
260
1 8.8
W TC=25˚C, TJ = 150 ˚C ˚C
˚C 1.6mm (0.063”) from case for 10s
Nm lbf-in
M3 or 6-32 screw
Note
Fig. 19 Fig. 22 Fig. 20
1
C2M0040120D Rev. 3, 04-2021
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS VGS(th)
Drain-Source Breakdown Voltage Gate Threshold Voltage
1200
2.0
3.2
2.4
IDSS
Zero Gate Voltage Drain Current
1
IGSS
Gate-Source Leakage Current
44
RDS(on) Drain-Source On-State Resistance
82
gfs
Transconductance
18.2 17.2
Ciss
Input Capacitance
2440
Coss
Output Capacitance
171
Crss
Reverse Transfer Capacitance
11
Eoss
Coss Stored Energy
89
EON
Turn-On Switching Energy (Body Diode)
1.7
EOFF
Turn Off Switching Energy (Body Diode)
0.4
EON
Turn-On Switching Energy (External SiC Diode)
1.3
EOFF
Turn Off Switching Energy (External SiC Diode)
0.4
td(on)
Turn-On Delay Time
13
tr
Rise Time
61
td(off)
Turn-Off Delay Time
25
tf
Fall Time
13
RG(int)
Internal Gate Resistance
1.8
Qgs
Gate to Source Charge
34
Qgd
Gate to Drain Charge
42
Qg
Total Gate Charge
120
Max.
4
100 250 52
Unit V V V μA nA
mΩ
S
Test Conditions VGS = 0 V, ID = 100 μA VDS = VGS , ID = 10mA VDS = VGS , ID = 10mA,TJ = 150 °C VDS = 1200 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 40 A VGS = 20 V, ID = 40 A, TJ = 150 °C VDS= 20 V, IDS= 40 A VDS= 20 V, IDS= 40 A, TJ = 150 °C
VGS = 0 V pF VDS = 1000 V
f = 1 MHz μJ VAC = 25 mV
mJ VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH
VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH
VDD = 800 V, VGS = -5/20 V ID = 40 A ns RG(ext) = 2.5 Ω, RL = 20 Ω Timing relative to VDS Per IEC60747-8-4 pg 83
Ω f .