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SFF1604GD Dataheets PDF



Part Number SFF1604GD
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 16 Ampere Insulated Tandem Polarity Super Fast Recovery Half Bridge Rectifier
Datasheet SFF1604GD DatasheetSFF1604GD Datasheet (PDF)

SFF1604GD thru SFF1608GD ® SFF1604GD/SFF1606GD/SFF1608GD Pb Pb Free Plating Product 16 Ampere Insulated Tandem Polarity Super Fast Recovery Half Bridge Rectifier Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems ITO-220AB Unit:mm Mechanical.

  SFF1604GD   SFF1604GD


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SFF1604GD thru SFF1608GD ® SFF1604GD/SFF1606GD/SFF1608GD Pb Pb Free Plating Product 16 Ampere Insulated Tandem Polarity Super Fast Recovery Half Bridge Rectifier Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems ITO-220AB Unit:mm Mechanical Data Case: Fully Insulated TO-220FP FullPak Plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approximately Case Case Case Case Positive Negative Doubler Series Connection Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "G" Suffix "GA" Suffix "GD" Suffix "GS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SFF1604GD SFF1606GD SFF1608GD UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100oC VRRM VRMS VDC IF(AV) 200 140 200 400 280 400 16.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 175 150 Maximum Instantaneous Forward Voltage @ 8.0 A VF Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Typical Thermal Resistance (Note 3) R JC Operating Junction and Storage Temperature Range TJ, TSTG 0.98 1.3 5.0 250 35 90 2.2 -55 to + 150 NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. 600 V 420 V 600 V A A 1.7 V uA uA nS pF oC/W oC Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ SFF1604GD thru SFF1608GD ® AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 13 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 CASE TEMPERATURE, oC 150 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 80 SFF1604GD SFF1606GD 8.0 SFF1608GD 0.1 0.01 TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 175 150 125 100 75 50 25 0 1 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 TJ=125oC 100 10 TJ=25oC 1 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p 100 JUNCTION CAPACITANCE, pF 10 0.1 1.0 4.0 10 REVERSE VOLTAGE, VOLTS 100 Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/ .


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