MJE800

MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC MJE700 MJE701 MJE800 MJE801 60 MJE702 MJE703 MJE802 MJE803 80 60 80 5.0 4.0 100 40 -65 to +150 3.13 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TC=100°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=50mA (MJE702,703,802,803) 80 BVCEO IC=50mA (MJE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750 hFE VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750 hFE VCE=3.0V, IC=4.0A 100 fT VCE=3.0V, IC=1.5A, f=1.0MHz 1.0 MAX 100 500 100 2.0 2.5 2.8 3.0 2.5 2.5 3.0 UNITS V V V A mA W °C...