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CGHV40030

Part Number	CGHV40030
Manufacturer	Cree
Description	GaN HEMT
Published	Mar 31, 2016
Detailed Description	CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high ele...
Datasheet	CGHV40030 PDF File

Overview

CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications.
The datasheet specifications are based on a 0.
96 - 1.
4 GHz amplifier.
The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package.
Typical Performance 0.
96 - 1.
4 GHz (TC = 25˚C), 50 V Parameter 0.
96 GHz 1.
1 GHz 1.
25 GHz Gain @ PSAT Saturated Output Power 15.
6 29 15.
8 30 Drain Efficiency @ PSAT 62 74 Note: Measured CW in the CGHV40030-AMP a...

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