CGHV35150

CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6 Typical Performance 3.1 - 3.5 GHz (TC = 85˚C) Parameter 3.1 GHz 3.2 GHz Output Power 180 180 Gain 13.5 13.5 Drain Efficiency 50 49 3.3 GHz 180 13.5 50 3.4 GHz 170 13.3 49 3.5 GHz 150 12.7 48 Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 dBm Units dB dBc % Features: Rated Power = 150 W @ TCASE = 85°C Operating Frequency = 2.9 - 3.5 GHz Transient 100 µsec - 300 µsec @ 20% Duty Cycle 13.5 dB Power Gain @ TCASE = 85°C 50 % Typical Drain Efficiency @ TCASE = 85°C Input Matched <0.3 dB Pulsed Amplitude Droop Rev 1.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Pulse Width Symbol PW Rating 300 Duty Cycle DC 20 Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 30 12 245 40...