PH3134-65M

PH3134-65M Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 7.7 350 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 25mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pout = 65W Input Power Vcc = 36V, Pout = 65W Power Gain Vcc = 36V, Pout = 65W Collector Efficiency Vcc = 36V, Pout = 65W Input Return Loss Load Mismatch Tolerance Vcc = 36V, Pout = 65W Vcc = 36V, Pout = 65W Frequency F = 3.1, 3.25, 3.4 GHz F = 3.1, 3.25, 3.4 GHz F = 3.1, 3.25, 3.4 GHz F = 3.1, 3.25, 3.4 GHz F = 3.1, 3.25, 3.4 GHz F = 3.25 GHz Symbol Min BVCES ICES RTH(JC) PIN GP ηC RL VSWR-T 65 7.5 35 - Max Units -V 5.0 mA 0.5 °C/W 11.6 W - dB -% -6 dB 2:1 - 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology...