4 W HIGH POWER SP4T SWITCH
DATA SHEET
GaAs INTEGRATED CIRCUIT
μPG2183T6C
4 W HIGH POWER SP4T SWITCH
DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4...
Description
DATA SHEET
GaAs INTEGRATED CIRCUIT
μPG2183T6C
4 W HIGH POWER SP4T SWITCH
DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T (Single Pole Four Throw) switch which was designed for digital cellular
phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in a 16-pin plastic QFN (Quad Flat Non-leaded) (T6C) package. And this package is able to
high-density surface mounting.
FEATURES
Supply voltage
: Vbat = 2.9 to 3.2 V (3.0 V TYP.)
Standby mode voltage
: VDD (H) = 1.7 to Vbat V (2.65 V TYP.)
: VDD (L) = 0 to +0.05 V (0 V TYP.)
Switch control voltage
: Vcont (H) = 1.7 to Vbat V (2.65 V TYP.)
: Vcont (L) = 0 to +0.05 V (0 V TYP.)
Operating Frequency
: f = 0.5 to 2.5 GHz
Low insertion loss
: Lins1 = 0.4 dB TYP. @ f = 0.5 to 1.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: Lins2 = 0.55 dB TYP. @ f = 1.0 to 2.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: Lins3 = 0.7 dB TYP. @ f = 2.0 to 2.5 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
High isolation
: ISL1 = 24 dB TYP. @ f = 0.5 to 1.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: ISL2 = 19 dB TYP. @ f = 1.0 to 2.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
Handling power
: Pin (0.1 dB) = +37.5 dBm TYP. @ f = 0.9 GHz, Vbat = 3.0 V,...
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