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SF1603PT Dataheets PDF



Part Number SF1603PT
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated Super Fast Rectifiers
Datasheet SF1603PT DatasheetSF1603PT Datasheet (PDF)

SF1601PT – SF1608PT Taiwan Semiconductor 16A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● Dual rectifier construction, positive center-tap ● Glass passivated chip junctions ● Superfast recovery time, high voltage ● Low forward voltage, high current capability ● Low thermal resistance ● Low power loss, high efficiency ● UL Recognized File # E-326243 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER VALUE UNIT IF 16 A VRRM 5.

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SF1601PT – SF1608PT Taiwan Semiconductor 16A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● Dual rectifier construction, positive center-tap ● Glass passivated chip junctions ● Superfast recovery time, high voltage ● Low forward voltage, high current capability ● Low thermal resistance ● Low power loss, high efficiency ● UL Recognized File # E-326243 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER VALUE UNIT IF 16 A VRRM 50 - 600 V IFSM 150 A TJ MAX 150 °C Package TO-247AD (TO-3P) Configuration Dual dies APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application MECHANICAL DATA ● Case: TO-247AD (TO-3P) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Mounting torque: 1.13 N⋅m maximum ● Polarity: As marked ● Weight: 5.60g (approximately) TO-247AD (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SF SF SF SF SF SF SF SF PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value SYMBOL 1601 PT SF 1601 PT 1602 PT SF 1602 PT 1603 PT SF 1603 PT 1604 PT SF 1604 PT 1605 PT SF 1605 PT 1606 PT SF 1606 PT 1607 PT SF 1607 PT 1608 UNIT PT SF 1608 PT VRRM 50 100 150 200 300 400 500 600 V VR(RMS) 35 70 105 140 210 280 350 420 V Forward current IF Surge peak forward current 8.3ms single half sine wave IFSM superimposed on rated load 16 A 150 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: G2103 SF1601PT – SF1608PT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL RӨJC TYP 2 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL SF1601PT SF1602PT SF1603PT Forward voltage per diode(1) SF1604PT SF1605PT IF = 8A, TJ = 25°C VF SF1606PT SF1607PT SF1608PT Reverse current @ rated VR per diode(2) TJ = 25°C IR TJ = 125°C Junction capacitance per diode 1MHz, VR = 4.0V CJ Reverse recovery time Notes: 1. Pulse test with PW = 0.3ms IF = 0.5A, IR = 1.0A Irr = 0.25A trr 2. Pulse test with PW = 30ms TYP - 85 - MAX UNIT 0.95 V 1.30 V 1.70 V 10 µA 500 µA - pF 35 ns ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE SF16xPT TO-247AD (TO-3P) SF16xPTH TO-247AD (TO-3P) Notes: 1. “x” defines voltage from 50V(SF1601PT) to 600V(SF1608PT) 2. “H” means AEC-Q101 qualified PACKING 30 / Tube 30 / Tube 2 Version: G2103 SF1601PT – SF1608PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve AVERAGE FORWARD CURRENT (A) 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 1000 100 f=1.0MHz Vsig=50mVp-p 10 0.1 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS REVERSE CURRENT (μA) 100 TJ=125°C 10 TJ=75°C 1 TJ=25°C 0.1 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) 10010 SF1601PT-SF1604PT SF1U6F015DPTL-WSF1606PT 1 10 TJ=125°C 0.1 TJ=25°C SF1607PT-SF1608PT 1 0.01 Pulse width 300μs 1% duty cPycullese width 00..0101 0.40.3 0.60.4 0.80.5 1.00.61.2 0.71.4 0.81.6 0.91.8 12.0 1.1 1.2 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 150 8.3ms single half sine wave PEAK FORWARD SURGE CURRENT (A) 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: G2103 (A ) SF1601PT – SF1608PT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: G2103 PACKAGE OUTLINE DIMENSIONS TO-247AD (TO-3P) SF1601PT – SF1608PT Taiwan Semiconductor MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code 5 Version: G2103 SF1601PT – SF1608PT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of.


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