DatasheetsPDF.com

DFM450NXM45-F000 Dataheets PDF



Part Number DFM450NXM45-F000
Manufacturers Dynex
Logo Dynex
Description Fast Recovery Diode Module
Datasheet DFM450NXM45-F000 DatasheetDFM450NXM45-F000 Datasheet (PDF)

Replaces DS5892-1.0 DFM450NXM45-F000 Fast Recovery Diode Module DS5892-2 April 2011 (LN28308) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 900A Rating  Lead Free Construction KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 4500V 3.0V 450A 900A 4(K) 2(K) APPLICATIONS  Chopper Diodes  Boost and Buck Converters  Free-wheel Circuits  Motor Drives  Resonant Converters .

  DFM450NXM45-F000   DFM450NXM45-F000



Document
Replaces DS5892-1.0 DFM450NXM45-F000 Fast Recovery Diode Module DS5892-2 April 2011 (LN28308) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 900A Rating  Lead Free Construction KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 4500V 3.0V 450A 900A 4(K) 2(K) APPLICATIONS  Chopper Diodes  Boost and Buck Converters  Free-wheel Circuits  Motor Drives  Resonant Converters  Induction Heating  Multi-level Switch Inverters The DFM450NXM45-F000 is a dual 4500V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing PWM and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 3(A) 1(A) External connection required for a single 900A diode Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DFM450NXM45-F000 Note: When ordering, please use the complete part number Outline type code: N (See Fig. 7 for further information) Fig. 2 Package www.dynexsemi.com 1/6 DFM450NXM45-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VRRM IF IFM I2t Repetitive peak reverse voltage Forward current (per arm) Max. forward current I2t value fuse current rating Pmax Visol QPD Max. power dissipation Isolation voltage – per module Partial discharge – per module Test Conditions Tj = 125°C DC, Tcase = 80°C Tcase = 115°C, tp = 1ms VR = 0, tp = 10ms, Tj = 125°C Tcase = 25°C, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS Max. Units 4500 V 450 A 900 A 108 kA2s 3125 W 6000 V 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Comparative Tracking Index): 350 Symbol Parameter Rth(j-c) Rth(c-h) Tj Tstg Thermal resistance (per arm) Thermal resistance – case to heatsink (per module) Junction temperature Storage temperature range Screw Torque Test Conditions Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Mounting – M6 Electrical connections – M8 Min Typ. Max Units - - 32 °C/kW - - 8 °C/kW -40 - 125 °C -40 - 125 °C - - 5 Nm - - 10 Nm 2/6 www.dynexsemi.com STATIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise. Symbol Parameter IRM Peak reverse current VF Forward voltage LM Inductance Test Conditions VR = 4500V, Tj = 125°C IF = 450A IF = 450A, Tj = 125°C - DFM450NXM45-F000 Min Typ Max Units 30 mA 3.0 V 3.1 V 30 nH DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions IF = 450A VR =2250V dIF/dt = 2250A/μs Tcase = 125°C unless stated otherwise Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions IF = 450A VR = 2250V dIF/dt = 2250A/μs Min Typ. Max Units 350 μC 500 A 450 mJ Min Typ. Max Units 650 μC 600 A 800 mJ www.dynexsemi.com 3/6 DFM450NXM45-F000 Fig. 3 Diode typical forward characteristics Fig. 4 Transient thermal impedance Fig. 5 DC current rating vs case temperature Fig. 6 Reverse Bias Safe Operating Area (RBSOA) 4/6 www.dynexsemi.com DFM450NXM45-F000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal Weight: 900g Module Outline Type Code: N Fig. 7 Module outline drawing www.dynexsemi.com 5/6 DFM450NXM45-F000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning re.


DFM400XXM65-F000 DFM450NXM45-F000 DFM500NXM33-TS000


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)