Document
Features
BVCEO > -45V IC = -100mA high Collector Current PD = 435mW Power Dissipation 0.48mm2 package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile Complementary NPN Type BC847BFA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
BC857BFA
45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806
Mechanical Data
Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu, Solderable per MIL-STD-202,
Method 208 e4 Weight: 0.0008 grams (approximate)
X2-DFN0806-3
Top View
Bottom View
C
B
E
Device Symbol
B C
E
Top View Device Schematic
Ordering Information (Note 4)
Product BC857BFA-7B
Marking 3W
Reel size (inches) 7
Tape width (mm) 8mm
Quantity per reel 10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3W
Top View Bar Denotes Base and Emitter Side
3W = Product Type Marking Code
BC857FA
Document number: DS36018 Rev. 1 - 2
1 of 6 www.diodes.com
July 2013
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current
Symbol VCBO VCEO VEBO IC ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage and Temperature Range
Symbol PD RθJA RJL
TJ, TSTG
Value -50 -45 -6.0 -100 -200
Value 435 287 150
-55 to +150
BC857BFA
Unit V V V mA mA
Unit mW °C/W C/W °C
ESD Ratings (Note 7)
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model
Symbol ESD HBM ESD MM
Value 4,000 200
Unit JEDEC Class V 3A VB
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
- IC Collector Current (A)
VCE(sat) Limited
100m
DC 1s
100ms 10ms
10m
Single Pulse Tamb=25°C
1ms 100µs
100m
1
10
- VCE Collector-Emitter Voltage (V)
Safe Operating Area
Max Power Dissipation (W)
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
Thermal Resistance (°C/W)
300
275
T =25°C amb
250
225
200
175 D=0.5
150
125
100 75
D=0.2
Single Pulse
50 D=0.05
25 D=0.1
0 100µ 1m 10m 100m 1
10
Pulse Width (s)
100
Transient Thermal Impedance
1k
Maximum Power (W)
100 Single Pulse T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
BC857FA
Document number: DS36018 Rev. 1 - 2
2 of 6 www.diodes.com
July 2013
© Diodes Incorporated
BC857BFA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Collector-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current ON CHARACTERISTICS (Note 8)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
SMALL SIGNAL CHARACTERISTICS Output Capacitance
Symbol
Min
BVCBO BVCES BVCEO BVEBO ICBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
-50 -50 -45 -6.0
100 200
-600
Cobo
Typ
-100 -90 -65 -8.5
340 330 -70 -300 -760 -885 -670 -715
2.0
Current Gain-Bandwidth Product
fT 100 340
Note:
8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
Max
-15 -15
470 -175 -500 -1000 -1100 -780 -850
Unit Test Condition
V IC = -50µA, IB = 0 IC = -50µA, IB = 0
V IC = -1mA, IB = 0 V IE = -50µA, IC = 0 nA VCB = -40V nA VCE = -40V
IC = -10µA, VCE = -5.0V IC = -2.0mA, VCE = -5.0V
mV
IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA
mV
IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA
mV
IC = -2.0mA, VCE = -5V IC = -10mA, VCE.