DatasheetsPDF.com

BC857BFA Dataheets PDF



Part Number BC857BFA
Manufacturers Diodes
Logo Diodes
Description 45V PNP SMALL SIGNAL TRANSISTOR
Datasheet BC857BFA DatasheetBC857BFA Datasheet (PDF)

Features  BVCEO > -45V  IC = -100mA high Collector Current  PD = 435mW Power Dissipation  0.48mm2 package footprint, 16 times smaller than SOT23  0.4mm height package minimizing off-board profile  Complementary NPN Type BC847BFA  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Mechanical Data  Case: X2-DFN0806-3  Case Mat.

  BC857BFA   BC857BFA



Document
Features  BVCEO > -45V  IC = -100mA high Collector Current  PD = 435mW Power Dissipation  0.48mm2 package footprint, 16 times smaller than SOT23  0.4mm height package minimizing off-board profile  Complementary NPN Type BC847BFA  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Mechanical Data  Case: X2-DFN0806-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  NiPdAu, Solderable per MIL-STD-202, Method 208 e4  Weight: 0.0008 grams (approximate) X2-DFN0806-3 Top View Bottom View C B E Device Symbol B C E Top View Device Schematic Ordering Information (Note 4) Product BC857BFA-7B Marking 3W Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3W Top View Bar Denotes Base and Emitter Side 3W = Product Type Marking Code BC857FA Document number: DS36018 Rev. 1 - 2 1 of 6 www.diodes.com July 2013 © Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage and Temperature Range Symbol PD RθJA RJL TJ, TSTG Value -50 -45 -6.0 -100 -200 Value 435 287 150 -55 to +150 BC857BFA Unit V V V mA mA Unit mW °C/W C/W °C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value 4,000 200 Unit JEDEC Class V 3A VB Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information - IC Collector Current (A) VCE(sat) Limited 100m DC 1s 100ms 10ms 10m Single Pulse Tamb=25°C 1ms 100µs 100m 1 10 - VCE Collector-Emitter Voltage (V) Safe Operating Area Max Power Dissipation (W) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Thermal Resistance (°C/W) 300 275 T =25°C amb 250 225 200 175 D=0.5 150 125 100 75 D=0.2 Single Pulse 50 D=0.05 25 D=0.1 0 100µ 1m 10m 100m 1 10 Pulse Width (s) 100 Transient Thermal Impedance 1k Maximum Power (W) 100 Single Pulse T =25°C amb 10 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Power Dissipation 1k BC857FA Document number: DS36018 Rev. 1 - 2 2 of 6 www.diodes.com July 2013 © Diodes Incorporated BC857BFA Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Collector-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current ON CHARACTERISTICS (Note 8) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Symbol Min BVCBO BVCES BVCEO BVEBO ICBO ICES hFE VCE(sat) VBE(sat) VBE(on) -50 -50 -45 -6.0   100 200   -600  Cobo  Typ -100 -90 -65 -8.5   340 330 -70 -300 -760 -885 -670 -715 2.0 Current Gain-Bandwidth Product fT 100 340 Note: 8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%. Max     -15 -15  470 -175 -500 -1000 -1100 -780 -850   Unit Test Condition V IC = -50µA, IB = 0 IC = -50µA, IB = 0 V IC = -1mA, IB = 0 V IE = -50µA, IC = 0 nA VCB = -40V nA VCE = -40V  IC = -10µA, VCE = -5.0V IC = -2.0mA, VCE = -5.0V mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA mV IC = -2.0mA, VCE = -5V IC = -10mA, VCE.


BC847BFZ BC857BFA BC857BFZ


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)