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VSMY3940X01
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology
948553
DESCRIPTION As part of the SurfLightTM portfolio, the VSMY3940X01 is an infrared, 940 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD).
FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • AEC-Q101 qualified • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 60° • Suitable for high pulse current operation • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
RELEASED FOR APPLICATIONS Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission • IR touch panels • 3D TV • Light curtain
PRODUCT SUMMARY
COMPONENT VSMY3940X01
Ie (mW/sr) 15
Note • Test conditions see table “Basic Characteristics”
ϕ (deg) ± 60
λP (nm) 940
tr (ns) 10
ORDERING INFORMATION
ORDERING CODE VSMY3940X01-GS08 VSMY3940X01-GS18
Note • MOQ: minimum order quantity
PACKAGING Tape and reel Tape and reel
REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM PLCC-2 PLCC-2
Rev. 1.2, 25-Jun-14
1 Document Number: 84220
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSMY3940X01
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage Forward current Pulse peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs tp = 100 μs
acc. figure 10, J-STD-020 J-STD-051, soldered on PCB
VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
5 100 200
1 190 100 -40 to +85 -40 to +100 260 250
UNIT V mA mA A
mW °C °C °C °C K/W
PV - Power Dissipation (mW) IF - Forward Current (mA)
200 180 160 140 120 100
80 60 RthJA = 250 K/W 40 20
0 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60 40 RthJA = 250 K/W 20
0 0 20 40 60 80 100
Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
MAX.
Forward voltage
IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs
VF VF
1.44 1.9 2.2
Temperature coefficient of VF Reverse current Junction capacitance
IF = 100 mA VR = 0 V, f = 1 MHz, E = 0
TKVF IR Cj
-1.6 not designed for reverse operation
125
Radiant intensity
Radiant power Temperature coefficient of φe Angle of half intensity
IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms IF = 100 mA
Ie Ie φe TKφe ϕ
8
15 120 55 -0.25 ± 60
24
Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time
IF = 20 mA IF = 30 mA IF = 100 mA IF = 100 mA
λp Δλ TKλp tr
920
940 40 0.25 10
960
Fall time
IF = 100 mA
tf
10
UNIT V V
mV/K μA pF
mW/sr mW/sr
mW %/K deg nm nm nm/K ns ns
Rev. 1.2, 25-Jun-14
2 Document Number: 84220
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
VSMY3940X01
Vishay Semiconductors
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
1000
tp = 100 μs
100
10
1000
tp = 100 μs
100
10
1
1 1.0
1.2 1.4 1.6 1.8 2.0 2.2
VF - Forward Voltage (V)
2.4
Fig. 3 - Forward Current vs. Forward Voltage
0.1 1
10 100
IF - Forward Current (mA)
1000
Fig. 6 - Radiant Intensity vs. Forward Current
VF - Forward Voltage (V)
1.65 1.60 1.55
IF = 100 mA tp = 20 ms
1.50
1.45
1.40
1.35
1.30 -60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
Ie, rel - Relative Radiant Intensity (%)
120 IF = 100 mA tp = 20 ms
110
100
90
80 -60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
VF, rel - Relative Forward Voltage (%)
115 IF = 100 mA
110 tp = 20 ms
105
100
95
90 -60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Ie, rel - Relative Radiant Intensity (%)
100 90 80 70 60 50 40 30 20 10 0 800
IF = 20 mA
850 900 950 1000
λ - Wavel.