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VSMY3940X01 Dataheets PDF



Part Number VSMY3940X01
Manufacturers Vishay
Logo Vishay
Description High Speed Infrared Emitting Diode
Datasheet VSMY3940X01 DatasheetVSMY3940X01 Datasheet (PDF)

www.vishay.com VSMY3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology 948553 DESCRIPTION As part of the SurfLightTM portfolio, the VSMY3940X01 is an infrared, 940 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75.

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www.vishay.com VSMY3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology 948553 DESCRIPTION As part of the SurfLightTM portfolio, the VSMY3940X01 is an infrared, 940 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • AEC-Q101 qualified • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 60° • Suitable for high pulse current operation • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 RELEASED FOR APPLICATIONS Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission • IR touch panels • 3D TV • Light curtain PRODUCT SUMMARY COMPONENT VSMY3940X01 Ie (mW/sr) 15 Note • Test conditions see table “Basic Characteristics” ϕ (deg) ± 60 λP (nm) 940 tr (ns) 10 ORDERING INFORMATION ORDERING CODE VSMY3940X01-GS08 VSMY3940X01-GS18 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 Rev. 1.2, 25-Jun-14 1 Document Number: 84220 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSMY3940X01 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE Reverse voltage Forward current Pulse peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T = 0.5, tp = 100 μs tp = 100 μs acc. figure 10, J-STD-020 J-STD-051, soldered on PCB VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 100 200 1 190 100 -40 to +85 -40 to +100 260 250 UNIT V mA mA A mW °C °C °C °C K/W PV - Power Dissipation (mW) IF - Forward Current (mA) 200 180 160 140 120 100 80 60 RthJA = 250 K/W 40 20 0 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 120 100 80 60 40 RthJA = 250 K/W 20 0 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs VF VF 1.44 1.9 2.2 Temperature coefficient of VF Reverse current Junction capacitance IF = 100 mA VR = 0 V, f = 1 MHz, E = 0 TKVF IR Cj -1.6 not designed for reverse operation 125 Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA Ie Ie φe TKφe ϕ 8 15 120 55 -0.25 ± 60 24 Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time IF = 20 mA IF = 30 mA IF = 100 mA IF = 100 mA λp Δλ TKλp tr 920 940 40 0.25 10 960 Fall time IF = 100 mA tf 10 UNIT V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns Rev. 1.2, 25-Jun-14 2 Document Number: 84220 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) VSMY3940X01 Vishay Semiconductors Ie - Radiant Intensity (mW/sr) IF - Forward Current (mA) 1000 tp = 100 μs 100 10 1000 tp = 100 μs 100 10 1 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VF - Forward Voltage (V) 2.4 Fig. 3 - Forward Current vs. Forward Voltage 0.1 1 10 100 IF - Forward Current (mA) 1000 Fig. 6 - Radiant Intensity vs. Forward Current VF - Forward Voltage (V) 1.65 1.60 1.55 IF = 100 mA tp = 20 ms 1.50 1.45 1.40 1.35 1.30 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature Ie, rel - Relative Radiant Intensity (%) 120 IF = 100 mA tp = 20 ms 110 100 90 80 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature VF, rel - Relative Forward Voltage (%) 115 IF = 100 mA 110 tp = 20 ms 105 100 95 90 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Ie, rel - Relative Radiant Intensity (%) 100 90 80 70 60 50 40 30 20 10 0 800 IF = 20 mA 850 900 950 1000 λ - Wavel.


BAS70-06 VSMY3940X01 BAT54-G


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