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BAS40-05 Dataheets PDF



Part Number BAS40-05
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Low VF SMD Schottky Barrier Diode
Datasheet BAS40-05 DatasheetBAS40-05 Datasheet (PDF)

Small Signal Product BAS40 / -04 / -05 / -06 Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering.

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Small Signal Product BAS40 / -04 / -05 / -06 Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008g (approximately) SOT-23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage VRRM 40 Reverse Voltage VR 40 Repetitive Peak Forward Current IFRM 200 Mean Forward Current IO 200 Non-Repetitive Peak Forward Surge Current (Note 1) IFSM 0.6 Thermal Resistance (Junction to Ambient) (Note 2) RθJA 357 Junction and Storage Temperature Range TJ , TSTG -65 to +125 PARAMETER SYMBOL Reverse Breakdown Voltage IR=10μA V(BR) IF=1mA Forward Voltage IF=10mA VF IF=40mA Reverse Leakage Current VR=30V IR Junction Capacitance VR=1V, f=1.0MHz CJ Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA trr Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load Notes : 2. Valid provided that electrodes are kept at ambient temperature MIN 40 - MAX - 0.38 0.50 1.00 0.2 5.0 5.0 UNIT mW V V mA mA A oC/W oC UNIT V V μA pF ns Document Number: DS_S1412006 Version: F14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig.1 Power Derating Curve 200 BAS40 / -04 / -05 / -06 Taiwan Semiconductor Fig. 2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg 600 8.3 ms single half sine wave Peak Forward Surge Current (mA) PD - Power Dissipation (mW) 100 300 Instantaneous Forward Current (mA) 0 0 25 50 75 100 TA - Ambient Temperature (oC) 125 Fig. 3 Typical Forward Characteristics 1 0.1 0.01 0.001 TA= -40 °C TA= 0 °C TA= 25 °C TA=70 °C TA= 125 °C 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF, Instantaneous Forward Voltage (mV) Fig. 5 Typical Total Capacitance VS. Reverse Voltage 4 f=1.0MHz Junction Capacitance (pF) 2 0 0 5 10 15 Reverse Voltage (V) Document Number: DS_S1412006 20 Transient Thermal Impedance (oC/W) IR - Instantaneous Reverse Current (mA) 0 1 10 Numbers of Cycles at 60 Hz 100 10000 1000 100 10 1 0.1 0 Fig. 4 Typical Reverse Characteristics TA=125 °C TA=70 °C TA=25 °C TA=0 °C TA= -40 °C 10 20 30 VR - Reverse Voltage (V) 40 Fig. 6 Typical Transient Thermal 100 10 1 0.1 0.01 0.10 1.00 10.00 Pulse Duration (sec) 100.00 Version: F14 Small Signal Product ORDERING INFORMATION PART NO. PART NO. SUFFIX (Note 1) PACKING CODE PACKING CODE SUFFIX BAS40 BAS40-04 BAS40-05 -xx RF G BAS40-06 Note 1: Part No. Suffix „-xx “ would be used for special requirement PACKAGE SOT-23 BAS40 / -04 / -05 / -06 Taiwan Semiconductor PACKING 3K / 7" Reel MARKING 43 44 45 46 EXAMPLE PREFERRED P/N PART NO. BAS40 RF BAS40 BAS40 RFG BAS40 PART NO. SUFFIX BAS40-D0 RFG BAS40 -D0 PACKING CODE RF RF RF PACKING CODE SUFFIX G G DESCRIPTION Multiple manufacture source Multiple manufacture source Green compound Define manufacture source Green compound Document Number: DS_S1412006 Version: F14 Small Signal Product PACKAGE OUTLINE DIMENSIONS SUGGEST PAD LAYOUT PIN CONFIGURATION BAS40 / -04 / -05 / -06 Taiwan Semiconductor DIM. A B C D E F G H Unit(mm) Min Max 2.70 3.10 1.10 1.50 0.30 0.51 1.78 2.04 2.10 2.64 0.89 1.30 0.55 REF 0.10 REF Unit(inch) Min Max 0.106 0.122 0.043 0.059 0.012 0.020 0.070 0.083 0.080 0.104 0.035 0.051 0.022 REF 0.004 REF DIM. Z X Y C E Unit(mm) Typ. 2.8 0.7 0.9 1.9 1.0 Unit(inch) Typ. 0.11 0.03 0.04 0.07 0.04 Document Number: DS_S1412006 Version: F14 Small Signal Product BAS40 / -04 / -05 / -06 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such impr.


BAS40-04 BAS40-05 BAS40-06


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