BA157G

BA157G – BA159G Taiwan Semiconductor 1A, 400V - 1000V Fast Recovery Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● High current capability, Low VF ● High reliability ● High surge current capability ● Low power loss, high efficiency ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF 1 A VRRM 400 - 1000 V IFSM 30 A TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.330g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL BA157G Marking code on the device BA157G Repetitive peak reverse voltage VRRM 400 Reverse voltage, total rms value VR(RMS) 280 Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature IF IFSM TJ TSTG BA158G BA158G 600 420 1 30 -55 to +150 -55 to +150 BA159G BA159G 1000 700 UNIT V V A A °C °C 1 Version: I2106 BA157G – BA159G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 60 UNIT °C/W ELECTRICAL...